1/9 may 2000 stp3nc60 stP3NC60FP n-channel 600v - 3.3 w - 3a to-220/to-220fp powermesh ? ii mosfet n typical r ds (on) = 3.3 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n gate charge minimized description the powermesh ? ii is the evolution of the first generation of mesh overlay ? . the layout re- finements introduced greatly improve the ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. applications n high current, high speed switching n swith mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor driver absolute maximum ratings ( ? )pulse width limited by safe operating area type v dss r ds(on) i d stp3nc60 600 v <3.6 w 3a stP3NC60FP 600v <3.6 w 2a symbol parameter value unit stp3nc60 stP3NC60FP v ds drain-source voltage (v gs =0) 600 v v dgr drain-gate voltage (r gs =20k w ) 600 v v gs gate- source voltage 30 v i d drain current (continuos) at t c =25 c 33a i d drain current (continuos) at t c = 100 c 1.9 1.9(*) a i dm ( l ) drain current (pulsed) 12 12(*) a p tot total dissipation at t c =25 c 80 40 w derating factor 0.64 0.32 w/ c dv/dt (1) peak diode recovery voltage slope 3.5 v/ns v iso insulation withstand voltage (dc) - 2000 t stg storage temperature 60 to 150 c t j max. operating junction temperature 150 c (1)i sd 3a, di/dt 100a/ m s, v dd v (br)dss ,t j t jmax. (*)limited only by maximum temperature allowed internal schematic diagram 1 2 3 1 2 3 to-220 to-220fp www. datasheet datasheet datasheet datasheet 4u 4u4u 4u .com
stp3nc60/fp 2/9 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic to-220 to-220fp rthj-case thermal resistance junction-case max 1.56 3.12 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w rthc-sink thermal resistance case-sink typ 0.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 3a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =50v) 100 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a, v gs =0 600 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 1 m a v ds = max rating, t c = 125 c 50 m a i gss gate-body leakage current (v ds =0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250 m a 234v r ds(on) static drain-source on resistance v gs = 10v, i d = 1.5 a 3.3 3.6 w i d(on) on state drain current v ds >i d(on) xr ds(on)max, v gs =10v 3a symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d = 1.5a 2s c iss input capacitance v ds = 25v, f = 1 mhz, v gs =0 400 pf c oss output capacitance 57 pf c rss reverse transfer capacitance 7pf www. datasheet datasheet datasheet datasheet 4u 4u4u 4u .com
3/9 stp3nc60/fp electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 m s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time rise time v dd = 300 v, i d = 1.5 a r g = 4.7 w v gs =10v (see test circuit, figure 3) 9ns t r 13 ns q g total gate charge v dd = 480v, i d =3a, v gs = 10v 13 18.2 nc q gs gate-source charge 2.3 nc q gd gate-drain charge 4.4 nc symbol parameter test condit ions min. typ. max. unit t r(voff) off-voltage rise time v dd = 480v, i d =3a, r g =4.7 w, v gs = 10v (see test circuit, figure 5) 13 ns t f fall time 15 ns t c cross-over time 21 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 3 a i sdm (2) source-drain current (pulsed) 12 a v sd (1) forward on voltage i sd = 3 a, v gs =0 1.6 v t rr reverse recovery time i sd = 3 a, di/dt = 100a/ m s, v dd = 100v, t j = 150 c (see test circuit, figure 5) 420 ns q rr reverse recovery charge 1.5 m c i rrm reverse recovery current 7.1 a safe operating area for to-220 safe operating area for to-220fp www. datasheet datasheet datasheet datasheet 4u 4u4u 4u .com
stp3nc60/fp 4/9 static drain-source on resistance thermal impedence for to-220 output characteristics thermal impedence for to-220fp transfer characteristics transconductance www. datasheet datasheet datasheet datasheet 4u 4u4u 4u .com
5/9 stp3nc60/fp normalized gate threshold voltage vs temp. source-drain diode forward characteristics capacitance variations normalized on resistance vs temperature gate charge vs gate-source voltage www. datasheet datasheet datasheet datasheet 4u 4u4u 4u .com
stp3nc60/fp 6/9 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load www. datasheet datasheet datasheet datasheet 4u 4u4u 4u .com
7/9 stp3nc60/fp dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c www. datasheet datasheet datasheet datasheet 4u 4u4u 4u .com
stp3nc60/fp 8/9 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 3 3.2 0.118 0.126 l2 a b d e h g l6 ? f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data www. datasheet datasheet datasheet datasheet 4u 4u4u 4u .com
9/9 stp3nc60/fp information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com www. datasheet datasheet datasheet datasheet 4u 4u4u 4u .com
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